型号:

NTB25P06T4G

RoHS:无铅 / 符合
制造商:ON Semiconductor描述:MOSFET P-CH 60V 27.5A D2PAK
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
NTB25P06T4G PDF
产品目录绘图 MOSFET D2PAK
标准包装 10
系列 -
FET 型 MOSFET P 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 60V
电流 - 连续漏极(Id) @ 25° C 27.5A
开态Rds(最大)@ Id, Vgs @ 25° C 82 毫欧 @ 25A,10V
Id 时的 Vgs(th)(最大) 4V @ 250µA
闸电荷(Qg) @ Vgs 50nC @ 10V
输入电容 (Ciss) @ Vds 1680pF @ 25V
功率 - 最大 120W
安装类型 表面贴装
封装/外壳 TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装 D2PAK
包装 剪切带 (CT)
产品目录页面 1558 (CN2011-ZH PDF)
其它名称 NTB25P06T4GOSCT
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